features low cost diffvs ed junction low leakage and s im ilar s olvents mechanical data c a s e : j e d e c d o - 1 5 , m o l d e d p l a s t i c mil-std-202,method 208 mounting: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50hz,resistive or inductive load. for capacitive load,derate by 20%. maximum peak repetitive reverse voltage v rrm v max imum rms v oltage v rms v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a = 9 5 peak f orw ard surge urrent 8.3ms single half-sine-w ave superimposed on rated load @t j =125 m a x i m u m i n s t an t an e ous @ 4.5a,t j =25 forw ard voltage @ 1 . 5 a ,t j =100 v f v m a x i m u m r e v e r s e c u rr e n t @ t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja / w operating junction temperature range t j storage temperature range t stg note: 1. measured with i f = 1 a , v r = 30v , di f /dt=-50a/ m s. 2. m ea s u r ed at 1 . 0 m h z and a p p li e d r ev e r s e v o l t age of 4 . 0v d c . 3. thermal resistance f rom junction to ambient. 500.0 0 . 8 5 - 55 ----- + 150 easily cleaned with freon,alcohol, lsopropand polarity: color band denotes cathode w e ig h t : 0 . 0 1 4 o u n c e s , 0 . 39 g r a m s i r 35 62 4 5 - 5 5 ----- + 1 5 0 super fast rectifiers voltage range: 200 v current: 1.5 a maximum ratings and electrical characteristics d o - 15 low forward voltage drop high crrent capability i f(av) a 10.0 i fsm terminals: axial leads,solderable per 1.5 50.0 200 a a byw100 - - - 200 BYW100-200 200 140 units |? =0.5 1.2 dimensions in millimeters www.diode.kr diode semiconductor korea
peakforwordsurgecurrent amperes amperes amperes number of cycles at 60hz fi g. 4-- typi cal juncti on capaci tance ambient temperature , average forword current fi g. 3 -- forward derati ng curve byw100 - - - 200 fi g. 1-- peak forward surge current fi g. 2 -- typi cal forward characteri sti c instantaneous forward current instantaneous forward voltage, volts junction capacitance,pf reverse voltage, volts 0.2 0.4 0 25 50 75 100 0 125 0.6 0.8 1.0 1.2 150 1.6 1.4 1.8 s ingle p hase h alf wave 60h z r esistive or inductive load 0.375"(9.5mm )lead length 8.3ms si ngl e hal f sine-w ave 10 20 30 40 60 50 1 2 5 10 20 50 100 0 0 . 1 1 . 0 10 2.0 0 . 2 0 . 4 4 . 0 20 40 1 0 0 400 10 200 100 1000 40 20 t j =25 f=1.0mhz 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 25 pulse width=300 t j =100 www.diode.kr diode semiconductor korea
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